Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14282898Application Date: 2014-05-20
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Publication No.: US10283518B2Publication Date: 2019-05-07
- Inventor: Ki Hong Lee , Seung Ho Pyi , Seung Jun Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0152591 20131209
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/66 ; H01L29/792 ; H01L27/11582 ; H01L27/11573
Abstract:
A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.
Public/Granted literature
- US20150162342A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-06-11
Information query
IPC分类:
