Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15586285Application Date: 2017-05-04
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Publication No.: US10283507B2Publication Date: 2019-05-07
- Inventor: Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610072825 20160202
- Main IPC: H01L21/62
- IPC: H01L21/62 ; H01L27/092 ; H01L21/8238 ; H01L29/06 ; H01L21/02 ; H01L29/10
Abstract:
A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a first bump on the first region; a first doped layer on the first fin-shaped structure and the bump; and a gate structure covering the bump.
Public/Granted literature
- US20170236822A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-08-17
Information query
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