Invention Grant
- Patent Title: Pressure contact type semiconductor device stack
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Application No.: US15786928Application Date: 2017-10-18
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Publication No.: US10283478B2Publication Date: 2019-05-07
- Inventor: Kenichiro Omote , Ryo Nakajima , Makoto Mukunoki , Daisuke Yoshizawa , Yuta Ichikura , Naotaka Iio
- Applicant: Toshiba Mitsubishi-Electric Industrial Systems Corporation , Toshiba Energy Systems & Solutions Corporation
- Applicant Address: JP Chuo-ku JP Kawasaki-shi
- Assignee: Toshiba Mitsubishi-Electric Industrial Systems Corporation,Toshiba Energy Systems & Solutions Corporation
- Current Assignee: Toshiba Mitsubishi-Electric Industrial Systems Corporation,Toshiba Energy Systems & Solutions Corporation
- Current Assignee Address: JP Chuo-ku JP Kawasaki-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/11 ; H01L23/367 ; H01L23/40 ; H01L23/473

Abstract:
To provide a pressure contact type semiconductor device stack which can uniformly pressurize pressure contact type semiconductor devices irrespective of presence or absence of a notch portion of the pressure contact type semiconductor device, and can prevent thermal destruction of the relevant pressure contact type semiconductor device.A pressurizing device for pressurizing between pressure contact type semiconductor devices and heat sinks which have been stacked is provided with pressuring bodies arranged at the upper and lower surfaces, metal fittings for insulating plate each for distributing a pressure applied by the pressuring body to an outer circumferential surface, and insulating plates each for pressuring the relevant heat sinks by the pressure applied to a pressurizing surface of the relevant metal fitting for insulating plate, the pressure contact type semiconductor device has a notch portion at a part of a peripheral portion of a post surface of any one of a collector post surface or an emitter post surface, and a device for making a distance from a pressurizing surface of the metal fitting for insulating plate pressurized by the upper surface pressurizing body to a front surface of a chip equal to a distance from a pressurizing surface of the metal fitting for insulating plate pressurized by the lower surface pressurizing body to a back surface of a chip is provided.
Public/Granted literature
- US20180040581A1 PRESSURE CONTACT TYPE SEMICONDUCTOR DEVICE STACK Public/Granted day:2018-02-08
Information query
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