Invention Grant
- Patent Title: Electronic device and manufacturing method of electronic device
-
Application No.: US16019004Application Date: 2018-06-26
-
Publication No.: US10283464B2Publication Date: 2019-05-07
- Inventor: Daijiro Ishibashi
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2017-135647 20170711
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/31 ; H01L23/528 ; H01L23/522 ; H01L23/00

Abstract:
An electronic device includes a semiconductor device including a semiconductor chip, a first grounded layer formed on a surface of the semiconductor chip, a mold resin arranged on a side of the semiconductor device, an insulating layer arranged over the semiconductor device and the mold resin, a second grounded layer formed between the semiconductor device and the insulating layer, and the resin mold and the insulating layer, a second wiring layer formed over the insulating layer and includes a first area disposed at a part overlapping with the second grounded layer and a second area disposed on a side of an end part of the second grounded layer, a via that couples the first wiring layer and the second area of the second wiring layer, and a grounded conductor formed inside the insulating layer at a position overlapping with the second area of the second wiring layer.
Public/Granted literature
- US20190019767A1 ELECTRONIC DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE Public/Granted day:2019-01-17
Information query
IPC分类: