Invention Grant
- Patent Title: Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
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Application No.: US16016327Application Date: 2018-06-22
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Publication No.: US10283438B2Publication Date: 2019-05-07
- Inventor: Haruki Ito , Nobuaki Hashimoto
- Applicant: Advanced Interconnect Systems Limited
- Applicant Address: IE Dublin
- Assignee: ADVANCED INTERCONNECT SYSTEMS LIMITED
- Current Assignee: ADVANCED INTERCONNECT SYSTEMS LIMITED
- Current Assignee Address: IE Dublin
- Agency: Kunzler, PC
- Priority: JP2005-168373 20050608
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L23/482 ; H03H9/05 ; H03H9/10 ; H01L23/50 ; H01L23/522 ; H01L23/00
Abstract:
A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.
Public/Granted literature
Information query
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