- Patent Title: Single-crystal silicon carbide substrate, method for producing single-crystal silicon carbide substrate, and method for inspecting single-crystal silicon carbide substrate
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Application No.: US15006423Application Date: 2016-01-26
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Publication No.: US10283351B2Publication Date: 2019-05-07
- Inventor: Taisuke Hirooka , Hiroyuki Okuda
- Applicant: HITACHI METALS, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI METALS, LTD.
- Current Assignee: HITACHI METALS, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2015-013216 20150127
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G01N23/2251 ; H01L21/66 ; C30B29/36 ; H01L29/16
Abstract:
A single-crystal silicon carbide substrate has a main surface having a surface roughness fulfilling Ra≤1 nm, and has a ratio of hidden scratches of less than 50%, where, in the case where the main surface is arbitrary observed at 50 or more observation points with a field of view having a diameter of 100 μm, the ratio of hidden scratches is defined by a value obtained by dividing the number of the observation points at which a striped hidden scratch having a length of at least 50 μm by the total number of the observation points.
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