Invention Grant
- Patent Title: Single-crystal rare earth oxide grown on III-V compound
-
Application No.: US15166338Application Date: 2016-05-27
-
Publication No.: US10283349B2Publication Date: 2019-05-07
- Inventor: Kuanhsiung Chen , Minghwei Hong , Jueinai Kwo , Yen-Hsun Lin , Keng-Yung Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/51 ; H01L21/316 ; H01L21/02 ; H01L29/20 ; H01L29/66 ; H01L21/28
Abstract:
A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
Public/Granted literature
- US20170345646A1 SINGLE-CRYSTAL RARE EARTH OXIDE GROWN ON III-V COMPOUND Public/Granted day:2017-11-30
Information query
IPC分类:
