Invention Grant
- Patent Title: Gas-induced perovskite formation
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Application No.: US15574006Application Date: 2016-05-16
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Publication No.: US10283278B2Publication Date: 2019-05-07
- Inventor: Yabing Qi , Sonia Ruiz Raga
- Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Applicant Address: JP Kunigami-Gun, Okinawa
- Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee Address: JP Kunigami-Gun, Okinawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- International Application: PCT/JP2016/002397 WO 20160516
- International Announcement: WO2016/194317 WO 20161208
- Main IPC: H01G9/20
- IPC: H01G9/20 ; H01L51/00 ; H01L51/42 ; H01G9/00
Abstract:
A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.
Public/Granted literature
- US20180294106A1 GAS-INDUCED PEROVSKITE FORMATION Public/Granted day:2018-10-11
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