In a method of operating a nonvolatile memory device, a first sub-block to be erased is selected in a first memory block including the first sub-block and a second sub-block adjacent to the first sub-block, in response to a erase command and an address. The first sub-block includes memory cells connected to a plurality of word-lines including at least one boundary word-line adjacent to the second sub-block and internal word-lines other than the at least one boundary word-line. An erase voltage is applied to a substrate in which the first memory block is formed. Based on a voltage level of the erase voltage applied to the substrate, applying, a first erase bias condition to the at least one boundary word-line and a second erase bias condition different from the first erase bias condition to the internal word-lines during an erase operation being performed on the first sub-block.