Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US16030943Application Date: 2018-07-10
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Publication No.: US10283194B2Publication Date: 2019-05-07
- Inventor: Makoto Yabuuchi , Shinji Tanaka
- Applicant: Renesas Electronics Corporation
- Applicant Address: unknown Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: unknown Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-181823 20150915
- Main IPC: G11C11/417
- IPC: G11C11/417 ; G11C5/04 ; G11C5/14

Abstract:
A semiconductor storage device having a plurality of low power consumption modes is provided.The semiconductor storage device includes a plurality of memory modules where a plurality of low power consumption modes can be set and cancelled based on a first and a second control signals. At least a part of memory modules of the plurality of memory modules have a propagation path that propagates an inputted first control signal to a post stage memory module. The second control signal is inputted into each of the plurality of memory modules in parallel. Setting and cancelling of the first low power consumption mode of each memory module are performed based on a combination of the first control signal that is propagated through the propagation path and the second control signal. Setting and cancelling of the second low power consumption mode, in which regions where a power source is shut down are different from those in the first low power consumption mode, of each memory module are sequentially performed according to the first control signal that is propagated through the propagation path.
Public/Granted literature
- US20180315471A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2018-11-01
Information query
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