An embodiment static random access memory (SRAM) array includes a first SRAM mini array having a first plurality of functional SRAM cells in a first column of the SRAM array. Each of the first plurality of functional SRAM cells share a first bit line (BL). The SRAM array further includes a second SRAM mini array having a second plurality of functional SRAM cells in the first column. Each of the second plurality of functional SRAM cells share a second BL independently controlled from the first BL. The SRAM array further includes and a SRAM dummy array between the first SRAM mini array and the second SRAM mini array. The SRAM dummy array includes a plurality of SRAM array abut dummy cells in the first column. A first endpoint of the first BL and a second endpoint of the second BL are disposed in the SRAM dummy array.