Disclosed is a nonvolatile memory device. The nonvolatile memory device includes a ferroelectric memory element including a field effect transistor having a ferroelectric gate dielectric layer and a drain electrode. The nonvolatile memory device also includes a resistive memory element electrically connected in series to the drain electrode of the field effect transistor. A multilevel signal is stored in the nonvolatile memory device according to a channel resistance of the ferroelectric memory element and a resistance of the resistive memory element.