Invention Grant
- Patent Title: NAND flash memory and status output method in NAND flash memory
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Application No.: US15853841Application Date: 2017-12-24
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Publication No.: US10283175B1Publication Date: 2019-05-07
- Inventor: Minyi Chen
- Applicant: SHINE BRIGHT TECHNOLOGY LIMITED
- Applicant Address: CN Shanghai CN Beijing CN Hefei
- Assignee: GIGADEVICE SEMICONDUCTOR (SHANGHAI) INC.,GIGADEVICE SEMICONDUCTOR (BEIJING) INC.,GIGADEVICE SEMICONDUCTOR (HEFEI) INC.
- Current Assignee: GIGADEVICE SEMICONDUCTOR (SHANGHAI) INC.,GIGADEVICE SEMICONDUCTOR (BEIJING) INC.,GIGADEVICE SEMICONDUCTOR (HEFEI) INC.
- Current Assignee Address: CN Shanghai CN Beijing CN Hefei
- Agency: Gokalp Byramoglu
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C16/32 ; G11C7/22
Abstract:
The present application provides a status output method in NAND flash memory, including, setting ALE signal, CLE signal and WE#, signal wherein ALE and/or CLE signal is set to be 1 and WE# signal is set to be 1; when a falling edge of the RE# is detected, outputting LUN status signal of the NAND flash memory. Further, there is provided a NAND flash memory, including I/O signal pins, which includes an ALE signal pin, an CLE signal pin, a WE# signal pin, and a RE# signal pin; wherein when the ALE signal output by the ALE pin and/or CLE signal output by the CLE pin is 1, and WE# signal output by the WE# pin is 1, once a falling edge of the RE# is detected, the LUN status signal of the NAND flash memory is detected.
Information query
