Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15008350Application Date: 2016-01-27
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Publication No.: US10282343B2Publication Date: 2019-05-07
- Inventor: Takashi Higuchi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2015-068587 20150330
- Main IPC: G06F13/40
- IPC: G06F13/40 ; G06F13/42 ; G06F13/364

Abstract:
The disclosed invention improves the transfer efficiency of a bus transfer device. A semiconductor device includes a bus transfer device including a read data transfer path which can transfer read data having an n-bit width at a maximum. If first read data and second read data corresponding respectively to a first transaction and a second transaction have a total bit width of n bits or less, the bus transfer device can simultaneously transfer data obtained by unifying the first read data and the second read data, first transaction identification information, and second transaction identification information through the read data transfer path.
Public/Granted literature
- US20160292123A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-10-06
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