A stacked III-V semiconductor diode having an n+ substrate with a dopant concentration of at least 1019 cm−3 and a layer thickness of 50-400 μm, an n− layer with a dopant concentration of 1012-1016 cm−3 and a layer thickness of 10-300 μm, a p+ layer with a dopant concentration of 5·1018-5·1020 cm−3, including a GaAs compound and with a layer thickness greater than 2 μm, wherein the n+ substrate and the n− layer are integrally joined to one another. A doped intermediate layer with a layer thickness of 1-50 μm and a dopant concentration of 1012-1017 cm−3 is arranged between the n− layer and the p+ layer, and the intermediate layer is integrally joined to the n− layer and to the p+ layer.