- Patent Title: Electrostatic discharge device and method of fabricating the same
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Application No.: US14734156Application Date: 2015-06-09
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Publication No.: US10263123B2Publication Date: 2019-04-16
- Inventor: Ho Hyun Kim , Ha Yong Yang , Jeong Hwan Park
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2014-0160505 20141118
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/822 ; H01L27/02 ; H01L29/866 ; H01L29/861 ; H01L29/66 ; H01L29/43 ; H01L29/06
Abstract:
Provided are an electrostatic discharge (ESD) device and method of fabricating the same where the ESD device is configured to prevent electrostatic discharge which can be a cause to product failure. More particularly, the ESD device provided includes a Zener diode and a plurality of PN diodes by improving the architecture of an area wherein a Zener diode is configured compared to alternatives, to provide improved functionality when protecting against ESD events.
Public/Granted literature
- US20160141429A1 ELECTROSTATIC DISCHARGE DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-05-19
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