Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Invention Grant

US10262872B2 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium 有权

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Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Application No.: US15665698

Application Date: 2017-08-01
Publication No.: US10262872B2

Publication Date: 2019-04-16
Inventor: Takahiro Miyakura , Atsushi Moriya , Naoharu Nakaiso , Kensuke Haga
Applicant: HITACHI KOKUSAI ELECTRIC INC.
Applicant Address: JP Tokyo
Assignee: KOKUSAI ELECTRIC CORPORATION
Current Assignee: KOKUSAI ELECTRIC CORPORATION
Current Assignee Address: JP Tokyo
Agency: Volpe and Koenig, P.C.
Priority: JP2016-151950 20160802
Main IPC: H01L21/3205
IPC: H01L21/3205 ; C30B25/06 ; H01L21/02 ; H01L29/66 ; C30B25/00 ; C30B25/02 ; C23C16/30 ; C23C16/455 ; C23C16/04 ; C23C16/24 ; C23C16/52 ; C23C16/56

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract:

There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

Public/Granted literature

US20180040475A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2018-02-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）