Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15442107Application Date: 2017-02-24
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Publication No.: US10262575B2Publication Date: 2019-04-16
- Inventor: Hiroshi Tsuchi , Manabu Nishimizu , Yuushi Syutou
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2016-35475 20160226
- Main IPC: G09G3/20
- IPC: G09G3/20 ; G11C19/00 ; H03K19/0175 ; G09G3/36
Abstract:
A current corresponding to the difference between an input signal voltage and an output signal voltage is generated as an amplification acceleration current. The amplification acceleration current is sent to an output node of a current mirror, which drives a transistor in an output amplifier stage, and therefore added to a current to drive the transistor in the output amplifier stage.
Public/Granted literature
- US20170249894A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-08-31
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