Invention Grant
- Patent Title: Enhanced semiconductor switch
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Application No.: US14932572Application Date: 2015-11-04
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Publication No.: US10256814B2Publication Date: 2019-04-09
- Inventor: Robert Illing , Veli Kartal , Fang Lu-Ruhbach
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H03K17/94
- IPC: H03K17/94 ; H03K17/082
Abstract:
An first embodiment relates to a device comprising: a first semiconductor switch; an integrated sensor for determining a current that passes the first semiconductor switch; and a terminal to which a signal is provided in case the current fulfills a predetermined condition. Also, a system comprising such device, and a method of operation are suggested.
Public/Granted literature
- US20170126227A1 ENHANCED SEMICONDUCTOR SWITCH Public/Granted day:2017-05-04
Information query
