Invention Grant
- Patent Title: Fast transient high-side gate driving circuit
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Application No.: US15497337Application Date: 2017-04-26
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Publication No.: US10256813B2Publication Date: 2019-04-09
- Inventor: Taewoo Kwak , Joseph Rutkowski
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Hunter Clark PLLC
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/687 ; H02M3/158 ; H02M1/08

Abstract:
Techniques for improving the transient response in a switching converter are provided. An example of a gate driving circuit for driving a high-side switch in a switching converter according to the disclosure includes a first switch operably coupled to a source lead and a gate lead of the high-side switch, a first super source follower circuit operably coupled to the gate lead of the high-side switch, and a mid-voltage power supply operably coupled to the first super source follower circuit.
Public/Granted literature
- US20180316345A1 FAST TRANSIENT HIGH-SIDE GATE DRIVING CIRCUIT Public/Granted day:2018-11-01
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