A photoelectric converter includes two semiconductor layers forming a p/n junction as a photoelectric conversion layer. At least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and the quantum dot integrated film includes two or greater quantum dot layers having different energy levels. In a case that the quantum dot integrated film is a p-type, a quantum dot layer having a large difference between an energy level (Bv) of a valence band and a Fermi level (Ef) is disposed closer to a p/n junction surface.