In order to improve the dynamic characteristics of a vertical MOSFET using GaN, it is an objective of the present invention to reduce the resistance of a current path with a long hole movement distance in a p-type well. Provided is a vertical MOSFET including a gallium nitride layer having a main surface that is a non-polar surface; a p-type well region that is provided with a stripe shape in the main surface of the gallium nitride layer; and a stripe-shaped electrode provided above the p-type well region. Hole mobility is higher in a direction orthogonal to an extension direction of the stripe-shaped electrode than in the extension direction, among directions in a plane parallel to the main surface.