A device with a vertical transistor and a metal-insulator-metal (MIM) capacitor on a same substrate includes a vertical transistor including a bottom source/drain, a fin channel extending vertically from the bottom source/drain to a top source/drain, and a gate arranged around the fin channel, and the gate including a dielectric layer, a gate metal, and spacers arranged on opposing sides of the gate; and a MIM capacitor including a gate arranged over the bottom source drain, the gate including a gate metal and a dielectric layer, and a metal arranged in a depression in the bottom source/drain and extending through a channel in the gate to cover the gate, the metal directly contacting the dielectric layer of the gate.