Invention Grant
- Patent Title: Semiconductor film and field effect transistor having semiconductor and polymer portions stacked adjacent each other
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Application No.: US15506271Application Date: 2015-08-28
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Publication No.: US10256164B2Publication Date: 2019-04-09
- Inventor: Junichi Takeya , Junshi Soeda
- Applicant: The University of Tokyo
- Applicant Address: JP Tokyo
- Assignee: THE UNIVERSITY OF TOKYO
- Current Assignee: THE UNIVERSITY OF TOKYO
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2014-175793 20140829
- International Application: PCT/JP2015/074448 WO 20150828
- International Announcement: WO2016/031968 WO 20160303
- Main IPC: H01L23/13
- IPC: H01L23/13 ; H01L23/14 ; H01L29/786 ; H01L25/00 ; H01L51/00 ; H01L51/05
Abstract:
The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.
Public/Granted literature
- US20180053701A1 Fabrication Method Of Semiconductor Film, Semiconductor Film, And Field Effect Transistor Public/Granted day:2018-02-22
Information query
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