Invention Grant
- Patent Title: Semiconductor device, base, and method for manufacturing same
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Application No.: US15651679Application Date: 2017-07-17
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Publication No.: US10249804B2Publication Date: 2019-04-02
- Inventor: Shuji Shioji
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2016-141600 20160719
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/60 ; C23C14/08 ; C23C14/10 ; C23C14/16 ; C23C14/24 ; C23C14/34 ; C25D9/04 ; G02B5/08 ; H01L33/48 ; C25D7/12 ; C23C18/42

Abstract:
A semiconductor device includes a base and a semiconductor element disposed on the base. The base includes: a base member, a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide; and a dielectric multilayered film located above the reflective film.
Public/Granted literature
- US20180026169A1 SEMICONDUCTOR DEVICE, BASE, AND METHOD FOR MANUFACTURING SAME Public/Granted day:2018-01-25
Information query
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