Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15386901Application Date: 2016-12-21
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Publication No.: US10249757B2Publication Date: 2019-04-02
- Inventor: Bong Cheol Kim , Hyung Suk Lee , Eun Shoo Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/165 ; H01L29/10
Abstract:
A substrate includes a pattern forming region and a peripheral region. A first strain relaxed buffer layer is disposed on the pattern forming region of the substrate. A second strain relaxed buffer layer is disposed on the peripheral region of the substrate. A first insulating film pattern is disposed on the substrate. At least a portion of the first insulating film pattern is disposed within the first strain relaxed buffer layer. An upper surface of the first insulating film pattern is covered with the first strain relaxed buffer layer. A second insulating film pattern is disposed on the substrate. At least a portion of the second insulating film pattern is disposed within the second strain relaxed buffer layer. An upper surface of the second insulating film pattern is covered with the second strain relaxed buffer layer. A gate electrode is disposed on the first strain relaxed buffer layer.
Public/Granted literature
- US20180175199A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2018-06-21
Information query
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