Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US15951185Application Date: 2018-04-12
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Publication No.: US10249706B1Publication Date: 2019-04-02
- Inventor: Chia-Lung Chang , Wei-Hsin Liu , Po-Chun Chen , Yi-Wei Chen , Han-Yung Tsai , Tzu-Chin Wu , Shih-Fang Tzou
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201810223603 20180319
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108
Abstract:
The present invention provides a semiconductor structure comprising a substrate, a cell region defined on the substrate, a plurality of lower electrodes of the capacitor structures located in the cell region, an top support structure, contacting a top region of the lower electrode structure, and at least one middle support structure located between the substrate and the top support structure, contacting a middle region of the lower electrode structure, wherein when viewed in a top view, the top support structure and the middle support structure do not completely overlapped with each other.
Information query
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