Invention Grant
- Patent Title: Tunable device having a FET integrated with a BJT
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Application No.: US15348878Application Date: 2016-11-10
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Publication No.: US10249617B2Publication Date: 2019-04-02
- Inventor: Bin Li , Peter J. Zampardi, Jr. , Andre G. Metzger
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe, Martens, Olson and Bear, LLP
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H01L27/06 ; H01L21/8249 ; H01L27/08 ; H01L29/93 ; H01L29/94 ; H03J3/18 ; H01L29/10
Abstract:
A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.
Public/Granted literature
- US20170221880A1 TUNABLE DEVICE HAVING A FET INTEGRATED WITH A BJT Public/Granted day:2017-08-03
Information query
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