An electrostatic discharge device comprises a transistor with one of its source and drain serving as an input terminal of said device and the other serving as an output terminal. Said transistor comprises: a first conductive layer used as a first floating gate; a first insulating layer covering said first conductive layer; an active layer on said first insulating layer; a second insulating layer covering said active layer; a second conductive layer used as a second floating gate and on said second insulating layer; a third insulating layer covering said second conductive layer; a third conductive layer and a fourth conductive layer on said third insulating layer and on both sides of the active layer, said third conductive layer being isolated from the fourth conductive layer, wherein said third conductive layer serves as one of the source and the drain and said fourth conductive layer serves as the other.