Invention Grant
- Patent Title: Integrated circuit devices
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Application No.: US15655125Application Date: 2017-07-20
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Publication No.: US10249605B2Publication Date: 2019-04-02
- Inventor: Kuchanuri Subhash , Rastogi Sidharth , Deepak Sharma , Chul-hong Park , Jae-seok Yang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0166212 20161207
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/528 ; H01L27/118 ; H01L27/11 ; H01L27/105 ; H03K19/00

Abstract:
An integrated circuit (IC) device includes at least one standard cell. The at least one standard cell includes: first and second active regions respectively disposed on each of two sides of a dummy region, the first and second active regions having different conductivity types and extending in a first direction; first and second gate lines extending parallel to each other in a second direction perpendicular to the first direction across the first and second active regions, a first detour interconnection structure configured to electrically connect the first gate line with the second gate line; and a second detour interconnection structure configured to electrically connect the second gate line with the first gate line. The first and second detour interconnection structures include a lower interconnection layer extending in the first direction, an upper interconnection layer extending in the second direction, and a contact via.
Public/Granted literature
- US20180158811A1 INTEGRATED CIRCUIT DEVICES Public/Granted day:2018-06-07
Information query
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