Invention Grant
- Patent Title: Cavity formation using sacrificial material
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Application No.: US15794747Application Date: 2017-10-26
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Publication No.: US10249576B2Publication Date: 2019-04-02
- Inventor: David T. Petzold , David Scott Whitefield
- Applicant: SKYWORKS SOLUTIONS, INC.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Chang & Hale LLP
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H01L21/335 ; H01L21/8234 ; H01L23/00 ; H01L27/12 ; H01L21/84 ; H01L23/66 ; H03H9/24 ; H01L21/764 ; H01L21/768 ; H01L23/528 ; H01L49/02 ; H01L29/06 ; H01L29/78 ; H04B1/40 ; H01L21/306 ; H01L23/535 ; H01L29/66 ; H01L29/786 ; H01L21/683 ; H01L27/20 ; H03H9/02 ; H01L21/762 ; H01L25/16 ; H01L23/31
Abstract:
A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.
Public/Granted literature
- US20180076222A1 CAVITY FORMATION USING SACRIFICIAL MATERIAL Public/Granted day:2018-03-15
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