Invention Grant
- Patent Title: Tunable TiOxNy hardmask for multilayer patterning
-
Application No.: US15867830Application Date: 2018-01-11
-
Publication No.: US10249512B2Publication Date: 2019-04-02
- Inventor: Abraham Arceo De La Pena , Ekmini A. De Silva , Nelson M. Felix , Sivananda K. Kanakasabapathy
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent David Quinn
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; H01L21/027 ; H01L21/768 ; H01L21/02 ; G03F7/09
Abstract:
Lithographic multilayer structures are disclosed that generally include an organic planarizing layer and a tunable titanium oxynitride layer on the organic planarizing layer, wherein the titanium oxynitride includes TiOxNy, and wherein x is from 2.5 to 3.5 and y is from 0.75 to 1.25. The lithographic multilayer structure further includes a photosensitive resist layer on the titanium oxynitride layer. The tunable titanium oxynitride is configured to function as a hard mask and as an antireflective coating. Also disclosed are methods for patterning the lithographic multilayer structures.
Public/Granted literature
- US20180197752A1 TUNABLE TiOxNy HARDMASK FOR MULTILAYER PATTERNING Public/Granted day:2018-07-12
Information query
IPC分类:
