A method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber, involves removing native oxide from a surface of the wafer; and then depositing an epitaxial layer with a thickness of at least 40 μm on the surface of the wafer by introducing a silicon containing gas and a carrier gas into the process chamber, wherein the flow rate of the silicon containing gas is lower than 10 standard liters per minute and the flow rate of the carrier gas is at least 40 standard liters per minute.