Invention Grant
- Patent Title: Control circuit, semiconductor storage device, and method of controlling semiconductor storage device
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Application No.: US15718029Application Date: 2017-09-28
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Publication No.: US10249371B2Publication Date: 2019-04-02
- Inventor: Masazumi Maeda
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2016-214455 20161101
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C16/04 ; G11C16/10 ; G11C16/28 ; G11C29/00 ; G11C29/44 ; G11C29/52 ; G06F12/02 ; G11C11/56

Abstract:
A control circuit that controls a memory including a storage region and a redundant region, the control circuit includes a detector that detects a defective block in the memory, and a controller that switches, when the detector has detected the defective block, a data storage scheme of the first block detected as the defective block from a first storage scheme to a second storage scheme in which the number of bits of data to be stored in each of memory elements is smaller than the number of bits of data to be stored in each of the memory elements in the first storage scheme, and that stores a portion of data stored in the first block in the first storage scheme to be stored in the first block in the second storage scheme.
Public/Granted literature
- US20180122480A1 CONTROL CIRCUIT, SEMICONDUCTOR STORAGE DEVICE, AND METHOD OF CONTROLLING SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2018-05-03
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