Invention Grant
- Patent Title: Semiconductor storage device with volatile and nonvolatile memories to allocate blocks to a memory and release allocated blocks
-
Application No.: US15617220Application Date: 2017-06-08
-
Publication No.: US10248317B2Publication Date: 2019-04-02
- Inventor: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-339943 20071228; JP2008-046227 20080227
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/56 ; G06F12/02 ; G06F12/0804 ; G06F12/0866

Abstract:
A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
Public/Granted literature
Information query