Invention Grant
- Patent Title: Measuring individual device degradation in CMOS circuits
-
Application No.: US14843280Application Date: 2015-09-02
-
Publication No.: US10247769B2Publication Date: 2019-04-02
- Inventor: Barry P. Linder , Keith A. Jenkins
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Jennifer R. Davis
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/28

Abstract:
Methods and systems for measuring degradation includes measuring an initial electrical characteristic of a test device in a ring oscillator that includes multiple oscillator stages, each having a delay stage and one or more fan-out devices, and a test stage having a delay stage and the test device. The ring oscillator is operated for a period of time. The electrical characteristic of the test device is measured after operating the ring oscillator. A level of degradation in the test device is determined using a processor based on the measurements of the electrical characteristic of the test device.
Public/Granted literature
- US20170059644A1 MEASURING INDIVIDUAL DEVICE DEGRADATION IN CMOS CIRCUITS Public/Granted day:2017-03-02
Information query