- Patent Title: Film forming method and plasma chemical vapor deposition apparatus
-
Application No.: US15442121Application Date: 2017-02-24
-
Publication No.: US10246771B2Publication Date: 2019-04-02
- Inventor: Kazutaka Tachibana , Takayasu Sato , Yoji Sato , Hiromichi Nakata , Kazuyoshi Manabe , Seiji Okamura , Izuru Yamamoto
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- Priority: JP2016-038873 20160301
- Main IPC: C23C16/26
- IPC: C23C16/26 ; H05H1/46 ; C23C16/52 ; C23C16/511

Abstract:
A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.
Public/Granted literature
- US20170253961A1 FILM FORMING METHOD AND PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS Public/Granted day:2017-09-07
Information query
IPC分类: