Invention Grant
- Patent Title: Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film
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Application No.: US15573770Application Date: 2016-06-24
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Publication No.: US10246770B2Publication Date: 2019-04-02
- Inventor: Shunichiro Ohmi , Yasushi Masahiro
- Applicant: TANAKA KIKINZOKU KOGYO K.K. , TOKYO INSTITUTE OF TECHNOLOGY
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.,TOKYO INSTITUTE OF TECHNOLOGY
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.,TOKYO INSTITUTE OF TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Orrick, Herrington & Sutcliffe LLP
- Agent Joseph A. Calvaruso
- Priority: JP2015-128774 20150626
- International Application: PCT/JP2016/068768 WO 20160624
- International Announcement: WO2016/208704 WO 20161229
- Main IPC: C23C14/58
- IPC: C23C14/58 ; C23C14/18 ; H01L29/45 ; H01L21/285 ; H01L21/3205 ; C23C16/42 ; C22C27/00 ; C23C28/00 ; C23C14/16 ; C23C14/24 ; C22C28/00 ; H01L21/28 ; C22C30/00 ; C23C14/14 ; C23C14/34 ; H01L29/417 ; H01L29/78 ; C23C14/35 ; C23C14/46 ; C22C5/04
Abstract:
The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.
Public/Granted literature
- US20180148830A1 SILICIDE ALLOY FILM FOR SEMICONDUCTOR DEVICE ELECTRODE, AND PRODUCTION METHOD FOR SILICIDE ALLOY FILM Public/Granted day:2018-05-31
Information query
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