- Patent Title: Crack-tolerant photovoltaic cell structure and fabrication method
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Application No.: US15497310Application Date: 2017-04-26
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Publication No.: US10243096B2Publication Date: 2019-03-26
- Inventor: Bahman Hekmatshoartabari , Ning Li , Katherine L. Saenger
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/028 ; H01L31/068 ; H01L31/075 ; H01L31/0216 ; H01L31/0224 ; H01L31/0352 ; H01L31/0745 ; H01L31/0392 ; H01L31/0445 ; H02S50/10

Abstract:
After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.
Public/Granted literature
- US20170229603A1 CRACK-TOLERANT PHOTOVOLTAIC CELL STRUCTURE AND FABRICATION METHOD Public/Granted day:2017-08-10
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