Invention Grant
- Patent Title: Self-aligned air gap spacer for nanosheet CMOS devices
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Application No.: US15811812Application Date: 2017-11-14
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Publication No.: US10243043B2Publication Date: 2019-03-26
- Inventor: Shogo Mochizuki , Alexander Reznicek , Joshua M. Rubin , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/04 ; H01L29/16 ; H01L29/417 ; H01L29/423
Abstract:
A semiconductor structure is provided that contains a plurality of vertically stacked and spaced apart semiconductor nanosheets in which an inner spacer liner and an air gap are present. Collectively, each inner spacer liner and air gap combination provides an inner spacer structure that separates a portion of a functional gate structure that surrounds each semiconductor nanosheet from a portion of a source/drain (S/D) semiconductor material structure that is present on each side of the functional gate structure.
Public/Granted literature
- US20180358435A1 SELF-ALIGNED AIR GAP SPACER FOR NANOSHEET CMOS DEVICES Public/Granted day:2018-12-13
Information query
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