Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14873906Application Date: 2015-10-02
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Publication No.: US10242961B2Publication Date: 2019-03-26
- Inventor: Yuichiro Hinata
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JP2014-225323 20141105
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L23/373

Abstract:
A semiconductor device includes: an insulating substrate including an insulating plate and a circuit board on the insulating plate; a semiconductor chip having an electrode on a front surface thereof, a back of the semiconductor chip being fixed to the circuit board; a printed circuit board that faces the circuit board and the front surface of the semiconductor chip; and one or more conductive posts each having one end connected via solder to the circuit board or to the electrode on the semiconductor chip, another end connected to the printed circuit board, and one or more grooves that extend from said one end of the conductive post that contacts the solder to said another end of the conductive post connected to the printed circuit board.
Public/Granted literature
- US20160126209A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-05-05
Information query
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