A method of storing information or data in a nonvolatile memory device with multiple-page programming. The method, in one aspect, is able to activate a first drain select gate (“DSG”) signal. After loading the first data from a bit line (“BL”) to a nonvolatile memory page of a first memory block in response to activation of the first DSG signal during a first clock cycle, the first DSG signal is deactivated. Upon activating a second DSG signal, the second data is loaded from the BL to a nonvolatile memory page of a second memory block. The first data and the second data are simultaneously written to the first memory block and the second memory block, respectively.