Invention Grant
- Patent Title: Charge modulation element and solid-state imaging device
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Application No.: US15115814Application Date: 2015-02-06
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Publication No.: US10230914B2Publication Date: 2019-03-12
- Inventor: Shoji Kawahito , Keita Yasutomi , Sangman Han
- Applicant: National University Corporation Shizuoka University
- Applicant Address: JP Shizuoka-shi
- Assignee: National University Corporation Shizuoka University
- Current Assignee: National University Corporation Shizuoka University
- Current Assignee Address: JP Shizuoka-shi
- Agency: Metrolexis Law Group, PLLC
- Priority: JP2014-022516 20140207
- International Application: PCT/JP2015/000559 WO 20150206
- International Announcement: WO2015/118884 WO 20150813
- Main IPC: G01C3/08
- IPC: G01C3/08 ; H04N5/378 ; H01L27/144 ; G01S17/89 ; G01S7/486 ; H01L27/146 ; H04N5/374

Abstract:
A charge-modulation element includes a first charge-accumulation region, a second charge-accumulation region, a third charge-accumulation region, and a fourth charge-accumulation region, provided symmetric with respect to a center position of a light-receiving area, and a first field-control electrode pair, a second field-control electrode pair, a third field-control electrode pair, and a fourth field-control electrode pair, arranged on both sides of respective charge transport paths, for changing depletion potentials of the charge transport paths, which extend from the center position of the light-receiving area to the first charge-accumulation region, the second charge-accumulation region, the third charge-accumulation region, and the fourth charge-accumulation region.
Public/Granted literature
- US20170171485A1 CHARGE MODULATION ELEMENT AND SOLID-STATE IMAGING DEVICE Public/Granted day:2017-06-15
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