Invention Grant
- Patent Title: LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods
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Application No.: US15456930Application Date: 2017-03-13
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Publication No.: US10229993B2Publication Date: 2019-03-12
- Inventor: John Xia , Marco A. Zungia , Badredin Fatemizadeh
- Applicant: Maxim Integrated Products, Inc.
- Applicant Address: US CA San Jose
- Assignee: Maxin Integrated Products, Inc.
- Current Assignee: Maxin Integrated Products, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Lathrop Gage LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/311 ; H01L21/3213 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H03K17/687 ; H01L29/40 ; H01L29/10
Abstract:
A lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistor includes a silicon semiconductor structure including (a) a base layer, (b) a p-type reduced surface field effect (RESURF) layer disposed over the base layer in a thickness direction, (c) a p-body disposed over the p-type RESURF layer in the thickness direction, (d) a source p+ region and a source n+ region each disposed in the p-body, (e) a high-voltage n-type laterally-diffused drain (HVNLDD) disposed adjacent to the p-body in a lateral direction orthogonal to the thickness direction, the HVNLDD contacting the p-type RESURF layer, and (f) a drain n+ region disposed in the HVNLDD. The LDMOS transistor further includes (a) a first dielectric layer disposed on the silicon semiconductor structure in the thickness direction over at least part of the p-body and the HVNLDD and (b) a first gate conductor disposed on the first dielectric layer in the thickness direction.
Public/Granted literature
- US20170263766A1 LDMOS TRANSISTORS INCLUDING RESURF LAYERS AND STEPPED-GATES, AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2017-09-14
Information query
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