An array structure and a manufacturing method thereof are disclosed. The method for manufacturing the array structure includes: forming a gate insulating layer on a glass substrate; and etching the gate insulating layer at a position corresponding to a source/drain signal access terminal, and forming a through-hole structure provided with an outward-inclined side wall in the gate insulating layer. Conductive films in the source/drain signal access terminal and a gate signal access terminal which have wires thereof alternate with each other have a same height, so that the forces applied to conductive balls can be more uniform, and hence the conductivity can be improved.