- Patent Title: Method of galvanic plating assisted by a current distribution layer
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Application No.: US15426158Application Date: 2017-02-07
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Publication No.: US10229885B2Publication Date: 2019-03-12
- Inventor: Martin Gruber , Steffen Jordan
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102016102155 20160208
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/58 ; C23C18/16 ; C25D7/00 ; H01L21/56 ; H01L21/683 ; H01L21/768 ; H01L23/00 ; H01L25/065 ; H01L21/288 ; H01L23/31

Abstract:
The method comprises providing a plurality of electronic devices, embedding the electronic devices in an encapsulation layer, forming vias into the encapsulation layer, the vias extending from a main face of the encapsulation layer to the electronic devices, and depositing a metallic layer onto the encapsulation layer including the vias by galvanic plating, the method further comprising providing a current distribution layer for effecting a distributed growth of the metallic material during the galvanic plating.
Public/Granted literature
- US20170229399A1 Method of galvanic plating assisted by a current distribution layer Public/Granted day:2017-08-10
Information query
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