Invention Grant
- Patent Title: Plasma etching method
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Application No.: US15701692Application Date: 2017-09-12
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Publication No.: US10229838B2Publication Date: 2019-03-12
- Inventor: Ryo Ishimaru , Satoshi Une , Masahito Mori
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACH HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACH HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2016-212459 20161031
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3213 ; H01L21/306 ; H01L21/311 ; H01L21/28
Abstract:
A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
Public/Granted literature
- US20180122651A1 PLASMA ETCHING METHOD Public/Granted day:2018-05-03
Information query
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