- Patent Title: Techniques for forming patterned features using directional ions
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Application No.: US15384496Application Date: 2016-12-20
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Publication No.: US10229832B2Publication Date: 2019-03-12
- Inventor: Steven R. Sherman , John Hautala , Simon Ruffell
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- Current Assignee Address: US MA Gloucester
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/263 ; H01L21/3065 ; H01L21/311 ; H01L21/768 ; H01L21/3213

Abstract:
A method of patterning a substrate. The method may include: providing a first surface feature and a second surface feature in a staggered configuration within a layer, the layer being disposed on the substrate, and directing first ions in a first exposure to a first side of the first surface feature and a first side of the second surface feature, in a presence of a reactive ambient containing a reactive species, wherein the first exposure etches the first side of the first surface feature and the first side of the second surface feature, wherein after the directing, the first surface feature and the second surface feature merge to form a third surface feature.
Public/Granted literature
- US20180082844A1 TECHNIQUES FOR FORMING PATTERNED FEATURES USING DIRECTIONAL IONS Public/Granted day:2018-03-22
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