Invention Grant
- Patent Title: Multilayer structure
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Application No.: US15322131Application Date: 2015-06-26
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Publication No.: US10229786B2Publication Date: 2019-03-12
- Inventor: Armin Goelzhaeuser , Andre' Beyer , Paul Penner , Xianghui Zhang
- Applicant: CNM Technologies GmbH
- Applicant Address: DE Bielefeld
- Assignee: CNM TECHNOLOGIES GMBH
- Current Assignee: CNM TECHNOLOGIES GMBH
- Current Assignee Address: DE Bielefeld
- Agency: 24IP Law Group
- Agent Timothy R DeWitt
- Priority: GB1411334.4 20140626
- International Application: PCT/EP2015/064562 WO 20150626
- International Announcement: WO2015/197834 WO 20151230
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01G4/33 ; H01G4/008 ; H01G4/14 ; H01G4/20 ; H01G4/32 ; H01G11/36 ; H01L49/02

Abstract:
A multilayer structure comprising a first layer, a second layer and a third layer, a capacitor comprising at least one multilayer structure, a capacitor comprising at least two two-layer structures, a method of manufacture of the multilayer structure, a method of manufacture of the capacitor, a microelectronic device and an energy storage device comprising the capacitor. The multilayer structure comprises a first layer, a second layer and a third layer, wherein the first layer and the third layer each form at least one of at least two electrodes and comprise one or more pyrolyzed carbon nanomembranes or one or more layers of graphene, and the second layer is a dielectric comprising one or more carbon nanomembranes.
Public/Granted literature
- US20170140873A1 Multilayer Structure Public/Granted day:2017-05-18
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