Invention Grant
- Patent Title: Method for manufacturing graphene layer
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Application No.: US14425112Application Date: 2012-11-26
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Publication No.: US10229768B2Publication Date: 2019-03-12
- Inventor: Jong-hyuk Yoon
- Applicant: HANWHA AEROSPACE CO., LTD.
- Applicant Address: KR Changwon-si
- Assignee: HANWHA AEROSPACE CO., LTD.
- Current Assignee: HANWHA AEROSPACE CO., LTD.
- Current Assignee Address: KR Changwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0098957 20120906
- International Application: PCT/KR2012/010008 WO 20121126
- International Announcement: WO2014/038752 WO 20140313
- Main IPC: H01B1/00
- IPC: H01B1/00 ; C01B32/00 ; B32B37/00 ; B32B38/00 ; B82Y30/00 ; B82Y40/00 ; C30B29/00 ; C30B31/00 ; H01B1/04 ; C30B29/02 ; C30B31/06 ; B32B37/20 ; B32B38/10 ; C01B32/186 ; C01B32/194
Abstract:
A method of manufacturing graphene, the method including: preparing a carrier member on which the graphene is formed on one surface thereof; exposing the graphene to dopant vapor to dope the graphene; transferring the doped graphene onto a target member; and removing the carrier member.
Public/Granted literature
- US20160189821A1 METHOD FOR MANUFACTURING GRAPHENE LAYER Public/Granted day:2016-06-30
Information query
